Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN

被引：279

作者：

Overberg, ME ^{[1
]}

Abernathy, CR

Pearton, SJ

Theodoropoulou, NA

McCarthy, KT

Hebard, AF

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.1397763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K. (C) 2001 American Institute of Physics.

引用

页码：1312 / 1314

页数：3

共 17 条

[1] Magnetoelectronics - Teaching magnets new tricks [J].

Awschalom, DD ;

Kawakami, RK .

NATURE, 2000, 408 (6815) :923-924

[2] QUANTUM-THEORY, THE CHURCH-TURING PRINCIPLE AND THE UNIVERSAL QUANTUM COMPUTER [J].

DEUTSCH, D .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1985, 400 (1818) :97-117

[3] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[4] QUANTUM COMPUTATION [J].

DIVINCENZO, DP .

SCIENCE, 1995, 270 (5234) :255-261

[5] Raman scattering study of Ga1-xMnxN crystals [J].

Gebicki, W ;

Strzeszewski, J ;

Kamler, G ;

Szyszko, T ;

Podsiadlo, S .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3870-3872

[6] COHESIVE PROPERTIES AND VIBRATIONAL ENTROPY OF 3D TRANSITION-METAL COMPOUNDS - MC,MN,MO,MS (NACL) COMPOUNDS, COMPLEX CARBIDES, AND NITRIDES [J].

GUILLERMET, AF ;

GRIMVALL, G .

PHYSICAL REVIEW B, 1989, 40 (15) :10582-10593

[7] Robust electrical spin injection into a semiconductor heterostructure [J].

Jonker, BT ;

Park, YD ;

Bennett, BR ;

Cheong, HD ;

Kioseoglou, G ;

Petrou, A .

PHYSICAL REVIEW B, 2000, 62 (12) :8180-8183

[8] Theory of ferromagnetism in diluted magnetic semiconductor quantum wells [J].

Lee, B ;

Jungwirth, T ;

MacDonald, AH .

PHYSICAL REVIEW B, 2000, 61 (23) :15606-15609

[9]

MATUKURA F, 2000, J APPL PHYS, V87, P6442

[10] PREPARATION OF (IN,MN)AS/(GA,AL)SB MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES AND THEIR FERROMAGNETIC CHARACTERISTICS [J].

MUNEKATA, H ;

ZASLAVSKY, A ;

FUMAGALLI, P ;

GAMBINO, RJ .

APPLIED PHYSICS LETTERS, 1993, 63 (21) :2929-2931

← 1 2 →