GSM transceiver front-end circuits in 0.25-μm CMOS

So far, CMOS has been shown to be capable of operating at radio-frequency (RF) frequencies, althougth the inadequacies of the device-level performance often have to be circumvented by innovations at the architectural level that tend to shift the burden to the circuit building blocks at lower frequencies, The RP front-end circuits presented in this paper show that excellent RF performance is feasible with 0.25-mu m CMOS, even in terms of the requirements of the tried-and-true superheterodyne architecture, Design fur tow-noise and low-current consumption targeted for global system for mobile communication handsets has been given particular attention In this paper, Low-noise amplifiers with sub-tds noise figures (NF's) and a double balanced mixer with 12.6-dB single-sideband NF, as well as sub-25-mA current consumption for the RP front end (complete receiver), are among the main achievements.