Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite

被引：249

作者：

Fujino, S. ^{[1
]}

Murakami, M. ^{[1
]}

Anbusathaiah, V. ^{[2
]}

Lim, S. -H. ^{[1
]}

Nagarajan, V. ^{[2
]}

Fennie, C. J. ^{[3
]}

Wuttig, M. ^{[1
]}

Salamanca-Riba, L. ^{[1
]}

Takeuchi, I. ^{[1
]}

机构：

[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[2] Univ New S Wales, Sch Mat Sci, Sydney, NSW 2052, Australia

[3] Argonne Natl Lab, Mat Sci Div, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2931706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the discovery of a lead-free morphotropic phase boundary (MPB) in Sm doped BiFeO(3) with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi(0.86)Sm(0.14)FeO(3) with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented PbZr(0.52)Ti(0.48)O(3) (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT. (C) 2008 American Institute of Physics.

引用

页数：3

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