Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si

被引:108
作者
Nagarajan, V [1 ]
Stanishevsky, A
Chen, L
Zhao, T
Liu, BT
Melngailis, J
Roytburd, AL
Ramesh, R
Finder, J
Yu, Z
Droopad, R
Eisenbeiser, K
机构
[1] Univ Maryland, Dept Mat & Nucl Engn, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
[2] Motorola Inc, Phys Sci Res Labs, Tempe, AZ 85284 USA
关键词
D O I
10.1063/1.1516857
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the out-of-plane piezoelectric response (d(33)), measured via piezoresponse scanning force microscopy, of submicron capacitors fabricated from epitaxial PbZrxTi1-xO3 thin films. Investigations on 1 mum(2) and smaller capacitors show that the substrate-induced constraint is dramatically reduced by nanostructuring. At zero field, the experimentally measured values of d(33) for clamped as well as submicron capacitors are in good agreement with the predictions from thermodynamic theory. The theory also describes very well the field dependence of the piezoresponse of clamped capacitors of key compositions on the tetragonal side of the PbZrxTi1-xO3 phase diagram as well as the behavior of submicron PbZr0.2Ti0.8O3 (hard ferroelectric) capacitors. However, the field-dependent piezoresponse of submicron capacitors in compositions closer to the morphotropic phase boundary (soft ferroelectrics) is different from the behavior predicted by the theoretical calculations. (C) 2002 American Institute of Physics.
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页码:4215 / 4217
页数:3
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