Epitaxial Si on Al2O3 films grown with O2 gas by the ultrahigh-vacuum chemical vapor deposition method

By an improved Al2O3 (100) growth on Si(100) using O-2 gas instead of N2O gas, high-crystalline quality silicon on insulates (SOI) and multistacked SOI structures were successfully fabricated on a 2-inch Si(100) wafer by the ultrahigh-vacuum chemical vapor deposition (UHV-CVD) method. The surface morphology of the Si top layer of the fabricated SOI structure is better than that of the silicon on sapphire (SOS) structure grown by the UHV-CVD method. The transistor action was confirmed from the electrical properties of the MOSFET, and the field effect mobility of 748 cm(2)/V s was obtained. These results were similar to those obtained from bulk Si. This improved Si top layer of SOI and multistacked SOI structures is due to the improved surface morphology and crystalline quality of the Al2O3 layer grown on Si with O-2 gas.