n-type organic field effect transistors from perylene bisimide block copolymers and homopolymers

被引：92

作者：

Huettner, Sven ^{[1
]}

Sommer, Michael ^{[1
]}

Thelakkat, Mukundan ^{[1
]}

机构：

[1] Univ Bayreuth, D-95440 Bayreuth, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2885712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present organic field effect transistors (OFETs) based on solution-processable n-type polymers containing perylene bisimide as pendant groups. The OFET characteristics of a diblock copolymer consisting of polystyrene and poly(perylene acrylate) (PPerAcr) blocks and a PPerAcr homopolymer are compared. Thermal annealing improves the OFET performance by two to three orders of magnitude, which can be attributed to the improved order and interface properties in the transport layer, arising from the better alignment of the perylene bisimide moieties. Both polymers show excellent n-type performances with electron carrier mobility of 1.2x10(-3) cm(2)/V s and low threshold voltages of 4-7 V. (c) 2008 American Institute of Physics.

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页数：3

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