Band gaps of doped and undoped films of molecular icosahedra

被引:30
作者
McIlroy, DN
Zhang, JD
Dowben, PA
Heskett, D
机构
[1] UNIV NEBRASKA, DEPT PHYS & ASTRON, BEHLEN LAB PHYS, LINCOLN, NE 68588 USA
[2] UNIV NEBRASKA, CTR MAT RES & ANAL, LINCOLN, NE 68588 USA
[3] UNIV RHODE ISL, DEPT PHYS, KINGSTON, RI 02881 USA
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1996年 / 217卷
基金
美国国家科学基金会;
关键词
band gaps; molecular icosahedra; thin films;
D O I
10.1016/S0921-5093(96)10302-6
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The band gaps and electronic stuctures of doped and undoped films of molecular icosahedra are reported, The occupied and unoccupied electronic structure of undoped icosahedral closo-1,2-dicarbadodecarborane (C2B10H12) thin films resembles that of the isolated molecule. The Fermi level of rile molecular thin films is roughly at midgap. Upon initial Na doping of the orthocarborane films, an unoccupied extramolecular (exopolyhedral) slate forms within thr gap at ail en energy of about 3 eV above the Fermi energy. With Na doping, the film of molecular icosahedra resembles a system with Hubbard-like bands and an appreciable correlation U.
引用
收藏
页码:64 / 68
页数:5
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