Real-time observation of electron-beam induced mass transport in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates

被引：5

作者：

Ogawa, T ^{[1
]}

Akabori, M ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

strained InGaAs/AlGaAs layers; electron-beam irradiation; mass transport; surface deformation; quantum disk;

D O I：

10.1143/JJAP.38.1040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied surface deformation due to electron-beam irradiation in strained InGaAs/AlGaAs layers grown on GaAs (100) and (311)B planes in a horizontal low-pressure metalorganic vapor phase epitaxy system at about 800 degrees C. The surface deformation was observed in real time using a high-resolution scanning electron microscope at a magnification of 300,000. The surface deformation occurred from the inside of InGaAs/AlGaAs grown layer under the electron-beam irradiated area with the accelerating voltage of 30 kV and the scanning time ranging from 60 to 120 s. The surface deformation was not consist of amorphous-carbon contamination. The mass transport seems to be caused by the residual strain relaxation due to electron-beam irradiation.

引用

页码：1040 / 1043

页数：4

共 12 条

[1]

GUNA S, 1990, APPL PHYS LETT, V57, P2110

[2] Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array [J].

Kuramochi, E ;

Temmyo, J ;

Tamamura, T ;

Kamada, H .

APPLIED PHYSICS LETTERS, 1997, 71 (12) :1655-1657

[3] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[4] SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].

MOISON, JM ;

HOUZAY, F ;

BARTHE, F ;

LEPRINCE, L ;

ANDRE, E ;

VATEL, O .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198

[5] SELF-ORGANIZED GROWTH OF STRAINED INGAAS QUANTUM DISKS [J].

NOTZEL, R ;

TEMMYO, J ;

TAMAMURA, T .

NATURE, 1994, 369 (6476) :131-133

[6] ORDERED QUANTUM DOTS - ATOMIC-FORCE MICROSCOPY STUDY OF A NEW SELF-ORGANIZING GROWTH MODE ON GAAS (311)B SUBSTRATES [J].

NOTZEL, R ;

TEMMYO, J ;

TAMAMURA, T ;

FUKUI, T ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7B) :L872-L875

[7]

NOTZEL R, 1994, APPL PHYS LETT, V65, P457, DOI 10.1063/1.113021

[8]

NOTZEL R, 1994, APPL PHYS LETT, V65, P2854, DOI 10.1063/1.112514

[9]

NOTZEL R, 1994, JPN J APPL PHYS 2, V33, pL275, DOI 10.1143/JJAP.33.L275

[10]

OGAWA T, UNPUB PHYSICA B

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