Comparative reliability investigation of different nitride based local charge trapping memory devices.

被引：7

作者：

Breuil, L ^{[1
]}

Haspeslagh, L ^{[1
]}

Blomme, P ^{[1
]}

Lorenzini, M ^{[1
]}

Wellekens, D ^{[1
]}

De Vos, J ^{[1
]}

Van Houdt, J ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper compares the endurance and retention characteristics of two charge trapping devices having different electron injection points and same hole injection points. We found that hole trapping in the bottom oxide can explain the different endurance behavior of both devices, and the degradation of their retention after cycling.

引用

页码：181 / 185

页数：5

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