Room-temperature spin injection from Fe into GaAs -: art. no. 016601

被引：650

作者：

Zhu, HJ ^{[1
]}

Ramsteiner, M ^{[1
]}

Kostial, H ^{[1
]}

Wassermeier, M ^{[1
]}

Schönherr, HP ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.87.016601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.

引用

页数：4

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