Effect of vacuum heat treatment on the metal-semiconductor phase transition in thin vanadium dioxide films

被引：19

作者：

Aliev, RA

Andreev, VN

Klimov, VA

Lebedev, VM

Nikitin, SE

Terukov, EI

Shadrin, EB

机构：

[1] Russian Acad Sci, Dagestan Res Ctr, Amirkhanov Inst Phys, Makhachkala 367003, Dagestan, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, BP Konstantinov Nucl Phys Inst, Gatchina 188300, Leningrad Oblas, Russia

来源：

TECHNICAL PHYSICS | 2005年 / 50卷 / 06期

关键词：

Dioxide; Phase Transition; Heat Treatment; Vanadium; Hysteresis Loop;

D O I：

10.1134/1.1947353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of vacuum heat treatment of thin vanadium dioxide films on the parameters of the metal semiconductor phase transition is studied. The results of heat treatment are compared with those obtained upon irradiation of the synthesized films by medium-energy electrons. The elemental composition of the films that is found by the Rutherford backscattering (RBS) method suggests that an observed change in the hysteresis loop of the films is associated with the reduction of the vanadium dioxide upon heating in a vacuum. (c) 2005 Pleiades Publishing, Inc.

引用

页码：754 / 757

页数：4

共 14 条

[1] Effect of synthesis conditions on the metal-semiconductor phase transition in vanadium dioxide thin films [J].