Direct optical measurement of the valence band offset of p+Si1-x-yGexCy/p-Si(100) by heterojunction internal photoemission

被引：10

作者：

Chang, CL ^{[1
]}

Rokhinson, LP ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Ctr Photon & Optoelect Mat, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical absorption measurements have been performed to study the effect of substitutional carbon on the valence band offset of compressively strained p(+) Si1-x-yGexCy/(100) p(-) Si. The compressively strained p(+) Si1-x-yGexCy/(100) p(-) Si heterojunction internal photoemission structures were grown by rapid thermal chemical vapor deposition with substitutional carbon levels up to 2.5%. Carbon decreased the valence band offset by 26 +/- 1 meV/% substitutional carbon. Based on previous reports of the effect of carbon on the band gap of Si1-x-yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of compressively strained Si1-x-yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment. (C) 1998 American Institute of Physics. [S0003-6951(68)04150-3].

引用

页码：3568 / 3570

页数：3

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