Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array

被引：88

作者：

Lin, Gong-Ru

Lin, Chun-Jung

Kuo, Hao-Chung

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn Photon & Optoelect, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Tsing Hua Univ, Dept Photon, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

关键词：

D O I：

10.1063/1.2778352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A silicon-nanocrystal (nc-Si) based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nanopillar array with size, height, and density of 30 nm, 350 nm, and 2.8x10(10) cm(-2), respectively, is characterized. The nanopillar roughened Si surface contributes to the improved turn-on characteristics by enhancing Fowler-Nordheim tunneling and reducing effective barrier height, providing the MOSLED a maximum optical power of 0.7 mu W obtained at biased current of 375 mu A. The optical intensity, turn-on current, and power-current slope of nc-Si MOSLED on high-aspect-ratio Si nanopillar array are 140 mu W/cm(2), 5 mu A, 2 +/- 0.8 mW/A, respectively. A maximum external quantum efficiency of 0.1% is reported.

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页数：3

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共 16 条

[1]

Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix [J].

Chen, LY ;

Chen, WH ;

Hong, FCN .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[2]

ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].

DIMARIA, DJ ;

KIRTLEY, JR ;

PAKULIS, EJ ;

DONG, DW ;

KUAN, TS ;

PESAVENTO, FL ;

THEIS, TN ;

CUTRO, JA ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416

[3]

FOWLER TH, 1928, P ROY SOC LOND A MAT, V119, P173

[4]

Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices [J].

Huang, Rui ;

Chen, Kunji ;

Han, Peigao ;

Dong, Hengping ;

Wang, Xiang ;

Chen, Deyuan ;

Li, Wei ;

Xu, Jun ;

Ma, Zhongyuan ;

Huang, Xinfan .

APPLIED PHYSICS LETTERS, 2007, 90 (09)

[5]

Effects of Ag/indium tin oxide contact to a SiC doping layer on performance of Si nanocrystal light-emitting diodes [J].

Huh, C ;

Park, NM ;

Shin, JH ;

Kim, KH ;

Kim, TY ;

Cho, KS ;

Sung, GY .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[6]

Excitation and de-excitation properties of silicon quantum dots under electrical pumping [J].

Irrera, A ;

Pacifici, D ;

Miritello, M ;

Franzò, G ;

Priolo, F ;

Iacona, F ;

Sanfilippo, D ;

Di Stefano, G ;

Fallica, PG .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1866-1868

[7]

Defect-enhanced visible electroluminescence of multi-energv silicon-implanted silicon dioxide film [J].

Lin, CJ ;

Lin, GR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (03) :441-447

[8]

Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask [J].

Lin, Gong-Ru ;

Lin, Chun-Jung ;

Kuo, Hao-Chung ;

Lin, Huang-Sheng ;

Kao, Chi-Chiang .

APPLIED PHYSICS LETTERS, 2007, 90 (14)

[9]

Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2 -: art. no. 094306 [J].

Lin, GR ;

Lin, CJ ;

Lin, CK ;

Chou, LJ ;

Chueh, YL .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[10]

PHOTOLUMINESCENCE STUDY OF DEFECTS IN ION-IMPLANTED THERMAL SIO2-FILMS [J].

NISHIKAWA, H ;

WATANABE, E ;

ITO, D ;

TAKIYAMA, M ;

LEKI, A ;

OHKI, Y .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :842-846