Terahertz Kerr and reflectivity measurements on the topological insulator Bi2Se3

被引：59

作者：

Jenkins, G. S. ^{[1
]}

Sushkov, A. B. ^{[1
]}

Schmadel, D. C. ^{[1
]}

Butch, N. P. ^{[1
]}

Syers, P. ^{[1
]}

Paglione, J. ^{[1
]}

Drew, H. D. ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.82.125120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T = 10 K and fields up to 8 T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24 meV. A single fluid free carrier bulk response cannot describe the line shape. Data from one sample is quantitatively described by a surface state with a small mass and surprisingly large associated spectral weight. However, an alternative interpretation in terms of bulk carrier-density variations remains a possibility

引用

页数：9

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