Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements

被引：401

作者：

Analytis, James G. ^{[1
,2
,3
]}

Chu, Jiun-Haw ^{[1
,2
,3
]}

Chen, Yulin ^{[1
,2
,3
]}

Corredor, Felipe ^{[1
,2
,3
]}

McDonald, Ross D. ^{[4
]}

Shen, Z. X. ^{[1
,2
,3
]}

Fisher, Ian R. ^{[1
,2
,3
]}

机构：

[1] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[2] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[4] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 20期

关键词：

TOPOLOGICAL INSULATOR; MAGNETIC-FIELDS; BI2TE3;

D O I：

10.1103/PhysRevB.81.205407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Shubnikov-de Haas (SdH) oscillations and angle-resolved photoemission spectroscopy (ARPES) are used to probe the Fermi surface of single crystals of Bi2Se3. We find that SdH and ARPES probes quantitatively agree on measurements of the effective mass and bulk band dispersion. In high carrier density samples, the two probes also agree in the exact position of the Fermi level E-F, but for lower carrier density samples discrepancies emerge in the position of E-F. In particular, SdH reveals a bulk three-dimensional Fermi surface for samples with carrier densities as low as 10(17) cm(-3). We suggest a simple mechanism to explain these differences and discuss consequences for existing and future transport studies of topological insulators.

引用

页数：5

共 22 条

[1] STM Imaging of Electronic Waves on the Surface of Bi2Te3: Topologically Protected Surface States and Hexagonal Warping Effects [J].

Alpichshev, Zhanybek ;

Analytis, J. G. ;

Chu, J. -H. ;

Fisher, I. R. ;

Chen, Y. L. ;

Shen, Z. X. ;

Fang, A. ;

Kapitulnik, A. .

PHYSICAL REVIEW LETTERS, 2010, 104 (01)

[2]

[Anonymous], 2013, Semiconductor Surfaces and Interfaces

[3] Quantum Interference in Macroscopic Crystals of Nonmetallic Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Liu, M. -H. ;

Qu, D. -X. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2009, 103 (24)

[4] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[5]

Gomes Kenjiro K., ARXIV09090921

[6] A tunable topological insulator in the spin helical Dirac transport regime [J].

Hsieh, D. ;

Xia, Y. ;

Qian, D. ;

Wray, L. ;

Dil, J. H. ;

Meier, F. ;

Osterwalder, J. ;

Patthey, L. ;

Checkelsky, J. G. ;

Ong, N. P. ;

Fedorov, A. V. ;

Lin, H. ;

Bansil, A. ;

Grauer, D. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

NATURE, 2009, 460 (7259) :1101-1105

[7] Observation of Unconventional Quantum Spin Textures in Topological Insulators [J].

Hsieh, D. ;

Xia, Y. ;

Wray, L. ;

Qian, D. ;

Pal, A. ;

Dil, J. H. ;

Osterwalder, J. ;

Meier, F. ;

Bihlmayer, G. ;

Kane, C. L. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

SCIENCE, 2009, 323 (5916) :919-922

[8] n-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals -: art. no. 103720 [J].

Kasparová, J ;

Drasar, C ;

Krejcová, A ;

Benes, L ;

Lost'ák, P ;

Chen, W ;

Zhou, ZH ;

Uher, C .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[9] Surface electronic properties of clean and S-terminated InSb(001) and (111)B [J].

King, P. D. C. ;

Veal, T. D. ;

Lowe, M. J. ;

McConville, C. F. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (08)

[10] GALVANOMAGNETIC PROPERTIES OF BI2SE3 WITH FREE CARRIER DENSITIES BELOW 5X1017 CM-3 [J].

KOHLER, H ;

FABRICIUS, A .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :487-496

← 1 2 3 →