Conducting atomic-force-microscope electrical characterization of submicron magnetic tunnel junctions

被引：34

作者：

Worledge, DC ^{[1
]}

Abraham, DW ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, MRAM Dev Alliance, Infineon Technol, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1582375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed the ability to electrically characterize submicron magnetic tunnel junctions using a conducting atomic force microscope (CAFM). This technique can be applied after only a short processing route, thereby saving time and resources, and reducing the potential for damaging the junctions. The CAFM can be used to measure hysteresis loops, magnetoresistance, resistance area product, switching astroids, current-voltage curves, and breakdown voltage of tunnel junctions. In this letter, we outline the sample requirements, detail the CAFM processing route, describe tip preparation, and report examples of data we have obtained with this technique over the last two years. (C) 2003 American Institute of Physics.

引用

页码：4522 / 4524

页数：3

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