Boron diffusion in silicon oxides and oxynitrides

被引：40

作者：

Ellis, KA ^{[1
]}

Buhrman, RA ^{[1
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 06期

关键词：

D O I：

10.1149/1.1838598

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new model is developed for boron diffusion in silicon oxides and oxynitrides in which boron diffuses substitutionally for silicon atoms, and the role of incorporated nitrogen is to occlude diffusion pathways. A Monte Carlo simulation based on this model, when compared to a series of experiments on p-MOS-type structures, accurately accounts for lowered diffusivities due to incorporated nitrogen.

引用

页码：2068 / 2074

页数：7

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