BORON SEGREGATION AT SI-SIO2 INTERFACE DURING NEUTRAL ANNEALS

被引：13

作者：

CHARITAT, G

MARTINEZ, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2869 / 2873

页数：5

共 15 条

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[9] DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS [J].

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