Development of bulk SiC single crystal grown by physical vapor transport method

被引:27
作者
Han, RJ
Xu, XG
Hu, XB [1 ]
Yu, NS
Wang, JY
Tian, YL
Huang, WX
机构
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China
关键词
SiC; crystal growth; semiconductor; defect;
D O I
10.1016/S0925-3467(02)00330-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reviews the development of bulk SiC single crystals grown by physical vapor transport method, including the polytype control, defects and doped consideration. In addition, defects in commercial 6H-SiC wafer, such as micropipes, hexagonal voids and subgrain boundaries, are examined by transmission optical microscopy, X-ray synchrotron topography in back-reflection geometry and high-resolution X-ray diffraction methods. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:415 / 420
页数:6
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