Pulsed laser deposition of epitaxial titanium diboride thin films

被引：17

作者：

Ferrando, V

Marré, D

Manfrinetti, P

Pallecchi, I

Tarantini, C

Ferdeghini, C

机构：

[1] INFM, LAMIA, Dipartimento Fis, I-16146 Genoa, Italy

[2] INFM, Dipartimento Chim & Chim Ind, I-16146 Genoa, Italy

来源：

THIN SOLID FILMS | 2003年 / 444卷 / 1-2期

关键词：

titanium diboride; pulsed laser ablation technique; atomic force microscopy imaging;

D O I：

10.1016/S0040-6090(03)01025-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial titanium diboride thin films have been deposited on sapphire substrates by pulsed laser ablation technique. Structural properties of the films have been studied during the growth by reflection high energy electron diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both kinds of measurements indicate a good crystallographic orientation of the TiB2 film both in plane and along the c axis. A flat surface has been observed by atomic force microscopy imaging. Electrical resistivity at room temperature resulted to be five times higher than the value reported for single crystals. The films also resulted to be very stable at high temperature, which is very promising for using this material as a buffer layer in the growth of magnesium diboride thin films. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：91 / 94

页数：4

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