Infrared spectroscopy of polycrystalline ZnO and ZnO:N thin films

被引：81

作者：

Keyes, BM ^{[1
]}

Gedvilas, LM ^{[1
]}

Li, X ^{[1
]}

Coutts, TJ ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期

关键词：

characterization; impurities; FTIR-spectroscopy; metalorganic chemical vapor deposition; oxides; zinc compounds;

D O I：

10.1016/j.jcrysgro.2005.04.053

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Polycrystalline zinc oxide (ZnO) and nitrogen-doped zinc oxide (ZnO:N) films, about I pm thick, were grown by metalorganic chemical vapor deposition on crystalline silicon substrates. Infrared absorption measurements reveal a complex growth chemistry resulting in the presence of carbon, oxygen, and nitrogen-related functional groups not seen in single-crystal material. Noteworthy changes in the absorbance spectra that occur with the incorporation of nitrogen include a group of strongly absorbing bands around 1800cm(-1) and a band at 3020cm(-1) attributable to a N H bond. These atomic configurations, in addition to the observed O-H bands around 3400cm(-1), provide insight into the difficulties of creating p-type ZnO through the incorporation of nitrogen. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：297 / 302

页数：6

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