Effect of pyrolysis temperature on the characteristics of PZT films deposited by the sol-gel method

被引:36
作者
Law, CW
Tong, KY [1 ]
Li, JH
Li, K
机构
[1] Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Peoples R China
[2] Jiangsu Inst Petrochem Technol, Funct Mat Lab, Jiangsu, Peoples R China
关键词
ceramics; dielectrics; ferroelectric properties;
D O I
10.1016/S0040-6090(98)00813-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the effect of pyrolysis temperatures between 300 and 600 degrees C on the materials and ferroelecrric characteristics of PZT films deposited by the sol-gel method. SEM showed that the grain size increased slightly with the pyrolysis temperature. X-ray diffraction showed that the texture was mainly [111] orientation for pyrolysis temperatures below 400 degrees C, but changed to [100] orientation for pyrolysis temperatures at or above 400 degrees C. Pyrochlore phases also existed in films pyrolyzed at temperatures above 400 degrees C. At a final annealing temperature of 700 degrees C for 10 min, the remanent polarization P-r has a maximum value at 400 degrees C pyrolysis temperature. Lf the annealing time was elongated, the value of P-r for films pyrolyzed at higher temperatures could be increased. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:220 / 224
页数:5
相关论文
共 12 条
[1]   FERROELECTRIC PROPERTIES OF CRYSTALLINE-ORIENTED LEAD ZIRCONATE TITANATES FORMED BY SOL-GEL DEPOSITION TECHNIQUE [J].
AOKI, K ;
FUKUDA, Y ;
NUMATA, K ;
NISHIMURA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :746-751
[2]   ORIENTATION OF RAPID THERMALLY ANNEALED LEAD-ZIRCONATE-TITANATE THIN-FILMS ON (111) PT SUBSTRATES [J].
BROOKS, KG ;
REANEY, IM ;
KLISSURSKA, R ;
HUANG, Y ;
BURSILL, L ;
SETTER, N .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (10) :2540-2553
[3]  
CHAPIN LN, 1990, MATER RES SOC SYMP P, V200, P153, DOI 10.1557/PROC-200-153
[4]   SYNTHESIS AND MICROSTRUCTURE OF HIGHLY ORIENTED LEAD TITANATE THIN-FILMS PREPARED BY A SOL-GEL METHOD [J].
CHEN, CH ;
RYDER, DF ;
SPURGEON, WA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (08) :1495-1498
[5]   PROCESSING AND PARAMETERS OF SOL-GEL PZT THIN-FILMS FOR GAAS MEMORY APPLICATIONS [J].
DEY, SK ;
ZULEEG, R .
FERROELECTRICS, 1990, 112 :309-319
[6]   EFFECT OF HEATING RATE ON THE CRYSTALLIZATION BEHAVIOR OF AMORPHOUS PZT THIN-FILMS [J].
HU, H ;
PENG, CJ ;
KRUPANIDHI, SB .
THIN SOLID FILMS, 1993, 223 (02) :327-333
[7]   RAPID THERMAL-PROCESSING OF PZT THIN-FILMS [J].
HUANG, Y ;
REANEY, IM ;
BELL, AJ .
FERROELECTRICS, 1992, 134 (1-4) :285-290
[8]  
Jaffe B., 1971, PIEZOELECTRIC CERAM
[9]   PROCESSING AND ELECTRICAL-PROPERTIES OF PB(ZRXTI1-X)O3 (X = 0.2-0.75) FILMS - COMPARISON OF METALLOORGANIC DECOMPOSITION AND SOL-GEL PROCESSES [J].
KLEE, M ;
EUSEMANN, R ;
WASER, R ;
BRAND, W ;
VANHAL, H .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) :1566-1576
[10]  
Klee M., 1994, Integrated Ferroelectrics, V4, P197, DOI 10.1080/10584589408017022