Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition -: art. no. 113501

被引：17

作者：

Koga, K ^{[1
]}

Kaguchi, N ^{[1
]}

Bando, K ^{[1
]}

Shiratani, M ^{[1
]}

Watanabe, Y ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8128581, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2005年 / 76卷 / 11期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2126572

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A cluster-eliminating filter is developed to reduce a volume fraction V-F of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the V-F value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the V-F value is reduced below 1/180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si-H-2 bonds below 5.46x10(-3) at. %. (c) 2005 American Institute of Physics.

引用

页码：1 / 4

页数：4

共 17 条

[1]

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[2] RESISTANCE OF A GASEOUS MEDIUM TO MOTION OF A SPHERICAL PARTICLE OF A SIZE COMPARABLE TO MEAN FREE PATH OF GAS MOLECULES [J].