Comparison of effects between large-area-beam ELA and SPC on TFT characteristics

被引:38
作者
Noguchi, T
Tang, AJ
Tsai, JA
Reif, R
机构
[1] Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge
[2] Sony Corp., Kanagawa-keo
关键词
D O I
10.1109/16.535332
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin film transistors (TFT's) with channel dimensions between 0.5 mu m and 5 mu m were fabricated using a low-temperature process of 600 C with single-shot excimer laser annealing (ELA) having a large-area beam of 45 x 45 mm(2), The uniformity in device characteristics across the ELA-treated region was studied, As the channel size decreases, TFT performance and their uniformity far ELA devices were superior compared to those formed with solid phase crystallization (SPC), The superior characteristics by ELA can be explained by the resulting grains with higher crystallinity. TFT's fabricated using ELA having a uniform beam are promising candidates for future LCD peripheral circuits on inexpensive glass and for LSI.
引用
收藏
页码:1454 / 1458
页数:5
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