UV PULSED LASER ANNEALING OF SI+ IMPLANTED SILICON FILM AND LOW-TEMPERATURE SUPER-THIN FILM TRANSISTORS

被引：28

作者：

MORITA, Y

NOGUCHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.L309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L309 / L311

页数：3

共 11 条

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IVERSON, RB
REIF, R
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[4] KUHL C, 1986, J ELECTROCHEM SOC, V121, P1496
[5] DIRECT MEASUREMENTS OF THE VELOCITY AND THICKNESS OF EXPLOSIVELY PROPAGATING BURIED MOLTEN LAYERS IN AMORPHOUS-SILICON
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[6] NEGISHI M, 1985, 29TH P S SEM ICS TEC, P97
[7] GRAIN-GROWTH AND CONDUCTIVE CHARACTERISTICS OF SUPER THIN POLYSILICON FILMS BY OXIDATION
NOGUCHI, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L434 - L436
[8] ADVANCED SUPERTHIN POLYSILICON FILM OBTAINED BY SI+ IMPLANTATION AND SUBSEQUENT ANNEALING
NOGUCHI, T
HAYASHI, H
OHSHIMA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (07) : 1771 - 1777
[9] LOW-TEMPERATURE POLYSILICON SUPER-THIN-FILM TRANSISTOR (LSFT)
NOGUCHI, T
HAYASHI, H
OHSHIMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L121 - L123
[10] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254