DIRECT MEASUREMENTS OF THE VELOCITY AND THICKNESS OF EXPLOSIVELY PROPAGATING BURIED MOLTEN LAYERS IN AMORPHOUS-SILICON

被引：50

作者：

LOWNDES, DH

JELLISON, GE

PENNYCOOK, SJ

WITHROW, SP

MASHBURN, DN

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期

关键词：

D O I：

10.1063/1.96918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1389 / 1391

页数：3

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[1] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON
DONOVAN, EP
SPAEPEN, F
TURNBULL, D
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700
[2] SOLIDIFICATION KINETICS OF PULSED LASER MELTED SILICON BASED ON THERMODYNAMIC CONSIDERATIONS
GALVIN, GJ
MAYER, JW
PEERCY, PS
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 644 - 646
[3] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI
GALVIN, GJ
THOMPSON, MO
MAYER, JW
HAMMOND, RB
PAULTER, N
PEERCY, PS
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (01) : 33 - 36
[4] JELLISON GE, UNPUB
[5] Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation
Larson, B. C.
Tischler, J. Z.
Mills, D. M.
[J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) : 144 - 154
[6] PULSED-LASER MELTING OF AMORPHOUS-SILICON - TIME-RESOLVED MEASUREMENTS AND MODEL-CALCULATIONS
LOWNDES, DH
WOOD, RF
NARAYAN, J
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (07) : 561 - 564
[7] TIME-RESOLVED OPTICAL STUDIES OF SILICON DURING NANOSECOND PULSED-LASER IRRADIATION
LOWNDES, DH
JELLISON, GE
WOOD, RF
[J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6747 - 6755
[8] LOWNDES DH, 1985, MRS S P, V35, P101
[9] LOWNDES DH, UNPUB
[10] PHASE-TRANSFORMATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER IRRADIATION OF AMORPHOUS-SILICON LAYERS
NARAYAN, J
WHITE, CW
HOLLAND, OW
AZIZ, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1821 - 1830