Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level

被引：45

作者：

Mnatsakanov, TT ^{[1
]}

Pomortseva, LI ^{[1
]}

Yurkov, SN ^{[1
]}

机构：

[1] All Russia Inst Elect Engn, Moscow 111250, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; Experimental Data; Carbide; Magnetic Material; Silicon Carbide;

D O I：

10.1134/1.1365181

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental data on electron and hole mobility in three silicon carbide polytypes, 4H-SiC, 6H-SiC, and 3C-SiC, are analyzed. A semiempirical model is proposed for describing the dependence of the majority carrier mobility on temperature and doping level. The model describes well the accumulated body of experimental data and can be applied to model characteristics of multilayer silicon carbide structures. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：394 / 397

页数：4

共 24 条

[1] ELECTRON MOBILITY MEASUREMENTS IN SIC POLYTYPES [J].