The numerical modelling of silicon carbide high power semiconductor devices

被引：8

作者：

Elford, A ^{[1
]}

Mawby, PA ^{[1
]}

机构：

[1] Univ Wales, Dept Elect & Elect Engn, Swansea SA2 8PP, W Glam, Wales

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 06期

关键词：

4H-SiC Schottky rectifier; numerical modelling; p-n junction; silicon carbide;

D O I：

10.1016/S0026-2692(98)00175-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Over the past decade there was a renewed surge of activity concerning the research and development of the wide bandgap group IV compound semiconductor silicon carbide (SiC). The current research interest in SiC for power electronic applications has re-emerged because of the advances made in fundamental SIC material and device processing technologies. This article outlines recent SIC power device developments with an emphasis on numerical device modelling results. This work also presents 1D and 2D numerical modelling results for unterminated circular high voltage 4H-SiC Schottky rectifiers. An overview of the current status of SIC high voltage junction termination techniques is also mentioned. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：527 / 534

页数：8

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