Overview of SiC power electronics

被引：46

作者：

Chelnokov, VE

Syrkin, AL

Dmitriev, VA

机构：

[1] UNIV MONTPELLIER 2,F-34095 MONTPELLIER 5,FRANCE

[2] HOWARD UNIV,SCH ENGN,MSRCE,WASHINGTON,DC 20059

来源：

关键词：

silicon carbide; power semiconductor devices; liquid phase epitaxy;

D O I：

10.1016/S0925-9635(97)00120-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews the status of silicon carbide power electronics. Results on SiC high voltage rectifiers and thyristors are summarized. Current issues in silicon carbide power devices are discussed, including the small device area and high base region resistance of the devices. It is shown that micropipes are not the defects that limit SiC device area. It is some other defects which cause a premature breakdown. To overcome these problems, liquid phase epitaxial growth for high power SiC devices is proposed. (C) 1997 Elsevier Science S.A.

引用

页码：1480 / 1484

页数：5

共 23 条

[1]

ANIKIN MM, 1991, SOV PHYS SEMICOND+, V25, P289

[2]

ANIKIN MM, 1984, PISMA ZH TEKH FIZ+, V10, P1053

[3]

ANIKIN MM, 1992, SEMICONDUCTOR INTERF, P280

[4]

CHELNOKOV VE, 1992, MAT SCI ENG B-FLUID, V2, P103

[5]

DMIRRIEV VA, 1994, PROPERTIES SILICON C, P214

[6] SILICON-CARBIDE AND SIC-ALN SOLID-SOLUTION P-N STRUCTURES GROWN BY LIQUID-PHASE EPITAXY [J].

DMITRIEV, VA .

PHYSICA B, 1993, 185 (1-4) :440-452

[7]

Henisch H.K., 1969, SILICON CARBIDE 1968

[8]

ITOH A, I PHYSICS C SERIES, V142, P689

[9] A 4.5 KV 6H SILICON-CARBIDE RECTIFIER [J].

KORDINA, O ;

BERGMAN, JP ;

HENRY, A ;

JANZEN, E ;

SAVAGE, S ;

ANDRE, J ;

RAMBERG, LP ;

LINDEFELT, U ;

HERMANSSON, W ;

BERGMAN, K .

APPLIED PHYSICS LETTERS, 1995, 67 (11) :1561-1563

[10]

MUNCH WV, 1978, SOLID STATE ELECTRON, V21, P1129, DOI 10.1016/0038-1101(78)90348-9

← 1 2 3 →