700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)

Silicon Carbide (4H-SiC). asymmetrical gate turnoff thyristors (GTO's) were fabricated and tested with respect to forward voltage drop (V-F), forward blocking voltage, and turnoff characteristics. Devices were tested from room temperature to 350 degrees C in the de mode, Forward blocking voltages ranged from 600-800 V at room temperature for the devices tested, V-F of a typical device at 350 degrees C was 4.8 V at a current density of 500 A/cm(2). Turn-off time was less than 1 mu s. Although no beveling or advanced edge termination techniques were used, the blocking voltage represented approximately 50% of the theoretical value when tested in an air ambient, Also, four GTO cells were connected in parallel to demonstrate 600-V, 1.4 A (800 A/cm(2)) performance.