CONTACT RESISTANCE MEASUREMENTS ON P-TYPE 6H-SIC

被引：99

作者：

CROFTON, J ^{[1
]}

BARNES, PA ^{[1
]}

WILLIAMS, JR ^{[1
]}

EDMOND, JA ^{[1
]}

机构：

[1] CREE RES INC,DURHAM,NC 27713

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.108964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Specific contact resistance measurements are reported for Al-Ti ohmic contacts to epitaxial p-type 6H-SiC as a function of epitaxial doping. The circular transmission line method was used to measure the specific contact resistance including the sheet resistance of the epitaxial layer and the modified sheet resistance under the contact. Epitaxial layers with Al doping between 5.5 X 10(15) and 2 X 10(19) CM-3 yielded specific contact resistances between 2.9 X 10(-2) and 1.5 X 10(-5) OMEGA CM2 . A good theoretical fit to the contact resistance data was obtained by assuming the metal-6H-SiC barrier height to equal 0.37 eV.

引用

页码：384 / 386

页数：3

共 21 条

[1] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
FANG, YK
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &
[2] CHAUDHRY MI, 1990, MATER RES SOC SYMP P, V162, P507
[3] COHEN SS, 1986, VLSI ELECTORNICS MET, V13
[4] CROFTON J, 1991, IN PRESS 4TH P INT C
[5] CROFTON J, 1990, J APPL PHYS, V68, P4903
[6] ELECTRICAL CONTACTS TO BETA-SILICON CARBIDE THIN-FILMS
EDMOND, JA
RYU, J
GLASS, JT
DAVIS, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (02) : 359 - 362
[7] EDMOND JA, 1991, P INT SEMICONDUCTOR
[8] EDMPOND JA, 1991, IN PRESS 4TH P INT C
[9] SINGLE-CRYSTALLINE, EPITAXIAL CUBIC SIC FILMS GROWN ON (100) SI AT 750-DEGREES-C BY CHEMICAL VAPOR-DEPOSITION
GOLECKI, I
REIDINGER, F
MARTI, J
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (14) : 1703 - 1705
[10] Merzbacher E, 1970, QUANTUM MECH, P129

← 1 2 3 →