1.1 kV 4H-SiC power UMOSFET's

被引：89

作者：

Agarwal, AK ^{[1
]}

Casady, JB ^{[1
]}

Rowland, LB ^{[1
]}

Valek, WF ^{[1
]}

White, MH ^{[1
]}

Brandt, CD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD CTR SOLID STATE RES,BETHLEHEM,PA 18014

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 12期

关键词：

D O I：

10.1109/55.644079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon Carbide (4H-SiC), power UMOSFET's were fabricated and characterized from room temperature to 200 degrees C. The devices had a 12-mu m thick lightly doped n-type drift layer, and a nominal channel length of 4 mu m. When tested under Fluorinert(TM) at room temperature, blocking voltages ranged from 1.0 kV to 1.2 kV. Effective channel mobility ranged from 1.5 cm(2)/V.s at room temperature with a gate bias of 32 V (3.5 MV/cm) up to 7 cm(2)/V.s at 100 degrees C with an applied gate bias of 26 V (2.9 MV/cm). Specific on-resistance (R-on,R-sp) was calculated to be as low as 74 m Omega.cm(2) at 100 degrees C under the same gate bias.

引用

页码：586 / 588

页数：3

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