High-voltage double-implanted power MOSFET's in 6H-SiC

被引：185

作者：

Shenoy, JN

Cooper, JA

Melloch, MR

机构：

[1] Sch. of Elec. and Comp. Engineering, Purdue University, West Lafayette

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 03期

关键词：

D O I：

10.1109/55.556091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the first planar high-voltage MOSFET's in 6H-SiC. A double-implant MOS (DIMOS) process is used. The planar structure ameliorates the high-field stressing encountered by SiC UMOS transistors fabricated by other groups. Blocking mode operation of up to 760 V is demonstrated, which is nearly three times higher than previously reported operating voltages for SiC MOSFET's.

引用

页码：93 / 95

页数：3

共 17 条

[1] EMPIRICAL DEPTH PROFILE SIMULATOR FOR ION-IMPLANTATION IN 6H-ALPHA-SIC [J].