A SIMPLE EDGE TERMINATION FOR SILICON-CARBIDE DEVICES WITH NEARLY IDEAL BREAKDOWN VOLTAGE

被引：76

作者：

ALOK, D

BALIGA, BJ

MCLARTY, PK

机构：

[1] Power Semiconductor Research Center, North Carolina State University, Raleigh

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 10期

关键词：

D O I：

10.1109/55.320979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a simple edge termination is described which can achieve near ideal parallel plane breakdown for silicon carbide devices. This novel edge termination involves self aligned implantation of a neutral species on the edges of devices to form an amorphous layer. With this termination formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to ideal plane parallel breakdown voltage.

引用

页码：394 / 395

页数：2

共 7 条

[1]

ALOK D, 1993, IEDM, P691

[2] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].