Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

被引:139
作者
Itoh, A
Kimoto, T
Matsunami, H
机构
[1] Dept. of Electron. Sci. and Eng., Kyoto University, Sakyo, Kyoto 606-01, Yoshidahonmachi
关键词
D O I
10.1109/55.485193
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Edge-terminated high-voltage Ti/4H-SiC Schottky rectifiers were successfully fabricated by using highly resistive layers at the periphery of Schottky contacts, The highly resistive layers were formed by B+ implantation followed by a heat treatment to improve the crystallinity of implanted layers. Utilizing these layers for the edge termination of 4H-SiC Schottky rectifiers, the reverse blocking characteristics were significantly improved in comparison with the rectifiers without edge termination, and a high-blocking voltage over 1100 V (the maximum: 1750 V) was achieved, The temperature dependence of the reverse-blocking characteristics was investigated, and high temperature operation even at 150 degrees C was demonstrated with a blocking voltage over 1100 V.
引用
收藏
页码:139 / 141
页数:3
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