HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES

被引：78

作者：

KIMOTO, T

URUSHIDANI, T

KOBAYASHI, S

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Kyoto University, Kyoto

[2] Fuji Electric Research and Development, Ltd.

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 12期

关键词：

D O I：

10.1109/55.260785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au/6H-SiC Schottky barrier diodes with high blocking voltages were successfully fabricated using layers grown by step-controlled epitaxy. A breakdown voltage over 1100 V could be achieved, which is the highest ever reported for silicon carbide (SiC) Schottky barrier diodes. These high-voltage SiC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude. The specific on-resistance increased with temperature according to T2.0 dependence. The diodes showed good characteristics at temperatures as high as 400-degrees-C.

引用

页码：548 / 550

页数：3

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