共 9 条
Improvement in power efficiency in organic light emitting diodes through intermediate Mg:Ag layer in LiF/Mg:Ag/Al cathodes
被引:8
作者:

Kim, Sung Hyun
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151, South Korea

Jang, Jyongsik
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151, South Korea

Lee, Jun Yeob
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151, South Korea
机构:
[1] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151, South Korea
[2] Dankook Univ, Dept Polymer Sci & Engn, Seoul 140714, South Korea
关键词:
D O I:
10.1149/1.2756337
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
Effects of Mg:Ag interlayer between LiF and Al on electron injection and device performances of organic light-emitting diodes (OLEDs) were investigated. Thickness of Mg:Ag layer was changed from 0 to 10 nm and the relationship between interlayer thickness and device performances was studied. Current density of OLEDs was increased due to efficient electron injection from cathode to organic layer by Mg:Ag interlayer. In addition, power efficiency of OLEDs was improved by more than 50% due to low driving voltage and high recombination efficiency and it showed a maximum value at a Mg: Ag thickness of 1.0 nm. (c) 2007 The Electrochemical Society.
引用
收藏
页码:J117 / J119
页数:3
相关论文
共 9 条
[1]
Electronic line-up in light-emitting diodes with alkali-halide/metal cathodes
[J].
Brown, TM
;
Friend, RH
;
Millard, IS
;
Lacey, DJ
;
Butler, T
;
Burroughes, JH
;
Cacialli, F
.
JOURNAL OF APPLIED PHYSICS,
2003, 93 (10)
:6159-6172

Brown, TM
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Friend, RH
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Millard, IS
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Lacey, DJ
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Butler, T
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Burroughes, JH
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Cacialli, F
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2]
Mechanisms of injection enhancement in organic light-emitting diodes through an Al/LiF electrode
[J].
Heil, H
;
Steiger, J
;
Karg, S
;
Gastel, M
;
Ortner, H
;
von Seggern, H
;
Stössel, M
.
JOURNAL OF APPLIED PHYSICS,
2001, 89 (01)
:420-424

Heil, H
论文数: 0 引用数: 0
h-index: 0
机构:
Tech Univ Darmstadt, Inst Mat Sci, Darmstadt, Germany Tech Univ Darmstadt, Inst Mat Sci, Darmstadt, Germany

Steiger, J
论文数: 0 引用数: 0
h-index: 0
机构: Tech Univ Darmstadt, Inst Mat Sci, Darmstadt, Germany

Karg, S
论文数: 0 引用数: 0
h-index: 0
机构: Tech Univ Darmstadt, Inst Mat Sci, Darmstadt, Germany

Gastel, M
论文数: 0 引用数: 0
h-index: 0
机构: Tech Univ Darmstadt, Inst Mat Sci, Darmstadt, Germany

Ortner, H
论文数: 0 引用数: 0
h-index: 0
机构: Tech Univ Darmstadt, Inst Mat Sci, Darmstadt, Germany

论文数: 引用数:
h-index:
机构:

Stössel, M
论文数: 0 引用数: 0
h-index: 0
机构: Tech Univ Darmstadt, Inst Mat Sci, Darmstadt, Germany
[3]
Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode
[J].
Hung, LS
;
Tang, CW
;
Mason, MG
.
APPLIED PHYSICS LETTERS,
1997, 70 (02)
:152-154

Hung, LS
论文数: 0 引用数: 0
h-index: 0
机构: Imaging Res. and Adv. Development, Eastmak Kodak Company, Rochester

Tang, CW
论文数: 0 引用数: 0
h-index: 0
机构: Imaging Res. and Adv. Development, Eastmak Kodak Company, Rochester

Mason, MG
论文数: 0 引用数: 0
h-index: 0
机构: Imaging Res. and Adv. Development, Eastmak Kodak Company, Rochester
[4]
High efficiency organic light-emitting devices with Al/NaF cathode
[J].
Lee, J
;
Park, Y
;
Kim, DY
;
Chu, HY
;
Lee, H
;
Do, LM
.
APPLIED PHYSICS LETTERS,
2003, 82 (02)
:173-175

Lee, J
论文数: 0 引用数: 0
h-index: 0
机构: Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305600, South Korea

Park, Y
论文数: 0 引用数: 0
h-index: 0
机构: Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305600, South Korea

Kim, DY
论文数: 0 引用数: 0
h-index: 0
机构: Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305600, South Korea

Chu, HY
论文数: 0 引用数: 0
h-index: 0
机构: Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305600, South Korea

Lee, H
论文数: 0 引用数: 0
h-index: 0
机构: Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305600, South Korea

Do, LM
论文数: 0 引用数: 0
h-index: 0
机构: Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305600, South Korea
[5]
Interfacial chemistry of Alq3 and LiF with reactive metals
[J].
Mason, MG
;
Tang, CW
;
Hung, LS
;
Raychaudhuri, P
;
Madathil, J
;
Giesen, DJ
;
Yan, L
;
Le, QT
;
Gao, Y
;
Lee, ST
;
Liao, LS
;
Cheng, LF
;
Salaneck, WR
;
dos Santos, DA
;
Brédas, JL
.
JOURNAL OF APPLIED PHYSICS,
2001, 89 (05)
:2756-2765

Mason, MG
论文数: 0 引用数: 0
h-index: 0
机构:
Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Tang, CW
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Hung, LS
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Raychaudhuri, P
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Madathil, J
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Giesen, DJ
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Yan, L
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Le, QT
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Gao, Y
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Lee, ST
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Liao, LS
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Cheng, LF
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Salaneck, WR
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

dos Santos, DA
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA

Brédas, JL
论文数: 0 引用数: 0
h-index: 0
机构: Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA
[6]
Improved performance and stability of organic light-emitting devices with silicon oxy-nitride buffer layer
[J].
Poon, CO
;
Wong, FL
;
Tong, SW
;
Zhang, RQ
;
Lee, CS
;
Lee, ST
.
APPLIED PHYSICS LETTERS,
2003, 83 (05)
:1038-1040

Poon, CO
论文数: 0 引用数: 0
h-index: 0
机构:
City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

Wong, FL
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

Tong, SW
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

Zhang, RQ
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

Lee, CS
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

Lee, ST
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
[7]
NaCl/Ca/Al as an efficient cathode in organic light-emitting devices
[J].
Shi, Shengwei
;
Ma, Dongge
.
APPLIED SURFACE SCIENCE,
2006, 252 (18)
:6337-6341

Shi, Shengwei
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

Ma, Dongge
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
[8]
Organic EL cells using alkaline metal compounds as electron injection materials
[J].
Wakimoto, T
;
Fukuda, Y
;
Nagayama, K
;
Yokoi, A
;
Nakada, H
;
Tsuchida, M
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1997, 44 (08)
:1245-1248

Wakimoto, T
论文数: 0 引用数: 0
h-index: 0
机构: Corporate R and D Laboratory, Pioneer Electronic Corporation

Fukuda, Y
论文数: 0 引用数: 0
h-index: 0
机构: Corporate R and D Laboratory, Pioneer Electronic Corporation

Nagayama, K
论文数: 0 引用数: 0
h-index: 0
机构: Corporate R and D Laboratory, Pioneer Electronic Corporation

Yokoi, A
论文数: 0 引用数: 0
h-index: 0
机构: Corporate R and D Laboratory, Pioneer Electronic Corporation

Nakada, H
论文数: 0 引用数: 0
h-index: 0
机构: Corporate R and D Laboratory, Pioneer Electronic Corporation

Tsuchida, M
论文数: 0 引用数: 0
h-index: 0
机构: Corporate R and D Laboratory, Pioneer Electronic Corporation
[9]
Experimental study of a chemical reaction between LiF and Al
[J].
Wang, SD
;
Fung, MK
;
Lai, SL
;
Tong, SW
;
Lee, CS
;
Lee, ST
;
Zhang, HJ
;
Bao, SN
.
JOURNAL OF APPLIED PHYSICS,
2003, 94 (01)
:169-173

Wang, SD
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

Fung, MK
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

Lai, SL
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

Tong, SW
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

Lee, CS
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

Lee, ST
论文数: 0 引用数: 0
h-index: 0
机构:
City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

Zhang, HJ
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

Bao, SN
论文数: 0 引用数: 0
h-index: 0
机构: City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China