Preparation of highly oriented thin film exhibiting transparent conduction by the sol-gel process

被引:55
作者
Nishio, K
Miyake, S
Sei, T
Watanabe, Y
Tsuchiya, T
机构
[1] Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Science University of Tokyo, Noda, Chiba 278
关键词
D O I
10.1007/BF00352774
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly oriented thin films exhibiting transparent conduction aluminium-doped ZnO (AZO), were prepared by a spin-coating method. The effects of the solvents on the preparation and electrical properties of the thin films were examined. The thin films were formed on quartz glass substrates by spin-coating into a selected solution and calcining at 700 degrees C for 5 h. The thin films had a resistivity of rho(Omega cm)=1.5 after heat treatment in an air atmosphere, and 1.5 x 10(-3) Omega cm in a reducing atmosphere, and a transmission of about 85% in the visible light region. The differences in the high orientation and the conductivities were attributed to a chelate formation in the aluminium-doped ZnO due to the solvent effect.
引用
收藏
页码:3651 / 3656
页数:6
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