Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

被引：13

作者：

Krishnan, AT

Bae, SH ^{[1
]}

Fonash, SJ

机构：

[1] Texas Instruments Inc, Dallas, TX 77243 USA

[2] Penn State Univ, PSU Nanofabricat Facil, University Pk, PA 16802 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 08期

关键词：

ECR; high-density plasmas; linear field effect mobility; microcrystalline silicon thin film transistors;

D O I：

10.1109/55.936356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-channel microcrystalline silicon (mc-Si) thin him transistors (TFTs) were fabricated using a high density plasma (HDP) approach. An electron cyclotron resonance (ECR) plasma source was employed to deposit all of thin film materials needed for the transistor; that is, intrinsic me-Si, n-type me-Si, and dielectric silicon dioxide were grown with the ECR high density plasmas and the deposition rates for these films were in the range of 120-150 Angstrom /min. The substrate temperatures during these depositions were maintained below 285 degreesC, To complete the fabrication of these TFTs, we used only two masks with one alignment, After 1 h annealing under forming gas atmosphere, the me-Si TFTs perform with linear field effect mobility of 12 cm(2)/V-s, on/off ratio of 10(6), subthreshold swing of 0.3 V/decade, off-current of 4 x 10(-13) A/mum and threshold voltage of 5 V,

引用

页码：399 / 401

页数：3

共 15 条

[1] Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition [J].