Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation

被引：4

作者：

Labrie, D ^{[1
]}

Lafontaine, H ^{[1
]}

Rowell, N ^{[1
]}

Charbonneau, S ^{[1
]}

Houghton, D ^{[1
]}

Goldberg, RD ^{[1
]}

Mitchell, IV ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON,ON N6A 3K7,CANADA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.117106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A demonstration of quantum well intermixing using ion implantation in S1-xGex/Si strained-layer heterostructures is presented. The quantum well related photoluminescence lines of implanted and annealed samples are blue shifted by up to 40 meV relative to those measured in annealed-only samples. Optical and structural qualities of the heterostructure remain high after implantation and annealing treatments. (C) 1996 American Institute of Physics.

引用

页码：993 / 995

页数：3

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