QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION

被引：63

作者：

CHARBONNEAU, S ^{[1
]}

POOLE, PJ ^{[1
]}

PIVA, PG ^{[1
]}

AERS, GC ^{[1
]}

KOTELES, ES ^{[1
]}

FALLAHI, M ^{[1
]}

HE, JJ ^{[1
]}

MCCAFFREY, JP ^{[1
]}

BUCHANAN, M ^{[1
]}

DION, M ^{[1
]}

GOLDBERG, RD ^{[1
]}

MITCHELL, IV ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON,ON N6A 3K7,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.359948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. (C) 1995 American Institute of Physics.

引用

页码：3697 / 3705

页数：9

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