FABRICATION OF NANOSTRUCTURES IN STRAINED INGAAS/GAAS QUANTUM-WELLS BY FOCUSED-ION-BEAM IMPLANTATION

被引：30

作者：

ALLARD, LB

AERS, GC

CHARBONNEAU, S

JACKMAN, TE

WILLIAMS, RL

TEMPLETON, IM

BUCHANAN, M

STEVANOVIC, D

ALMEIDA, FJD

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

[2] MCMASTER UNIV,ACCELERATOR LAB,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.351870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused-ion-beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimate the indium concentration and the degree of interdiffusion of the QWs from the observed shifts in PL transition energies. A study of nanostructures indicated that the lateral extent of compositional disordering was significantly larger than predicted from the lateral spreading of the ion beam.

引用

页码：422 / 428

页数：7

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