MECHANISM OF GA IMPLANTATION-INDUCED INTERMIXING OF GAAS-ALGAAS MATERIAL

被引：15

作者：

HIRAYAMA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.L162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L162 / L165

页数：4

共 17 条

[1] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES
CIBERT, J
PETROFF, PM
DOLAN, GJ
PEARTON, SJ
GOSSARD, AC
ENGLISH, JH
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1275 - 1277
[2] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES
CIBERT, J
PETROFF, PM
WERDER, DJ
PEARTON, SJ
GOSSARD, AC
ENGLISH, JH
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 223 - 225
[3] Crank J, 1979, MATH DIFFUSION, DOI [10.1021/ja01562a072, DOI 10.1021/JA01562A072]
[4] EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING
DANSAS, P
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2212 - 2216
[5] ARSENIC PRESSURE-DEPENDENCE OF INTERDIFFUSION OF ALGAAS/GAAS INTERFACE IN QUANTUM-WELL
FURUYA, A
WADA, O
TAKAMORI, A
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L926 - L928
[6] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
GUIDO, LJ
HOLONYAK, N
HSIEH, KC
KALISKI, RW
PLANO, WE
BURNHAM, RD
THORNTON, RL
EPLER, JE
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1372 - 1379
[7] ION-BEAM-INDUCED ATOMIC MIXING
HAFF, PK
SWITKOWSKI, ZE
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3383 - 3386
[8] ION-SPECIES DEPENDENCE OF INTERDIFFUSION IN ION-IMPLANTED GAAS-ALAS SUPERLATTICES
HIRAYAMA, Y
SUZUKI, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11): : 1498 - 1502
[9] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES
HIRAYAMA, Y
TARUCHA, S
SUZUKI, Y
OKAMOTO, H
[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2774 - 2777
[10] ELECTRICAL-PROPERTIES OF GA ION-BEAM IMPLANTED GAAS EPILAYER
HIRAYAMA, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12): : L965 - L967

← 1 2 →