THRESHOLD DOSE FOR ION-INDUCED INTERMIXING IN INGAAS/GAAS QUANTUM-WELLS

被引：11

作者：

ALLARD, LB

AERS, GC

PIVA, PG

POOLE, PJ

BUCHANAN, M

TEMPLETON, IM

JACKMAN, TE

CHARBONNEAU, S

AKANO, U

MITCHELL, IV

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 3K7,ONTARIO,CANADA

[2] UNIV OTTAWA,DEPT PHYS,OTTAWA K1N 6N5,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期

关键词：

D O I：

10.1063/1.111584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have determined the threshold dose for 8 MeV Bi+ ions to induce intermixing of GaAs quantum wells in AlGaAs and InGaAs quantum wells in GaAs after rapid thermal annealing at 850-degrees-C. Our measured threshold for the GaAs/AlGaAs system agrees well with previous work. The threshold for the InGaAs/GaAs system is much lower and explains, at least in part, earlier difficulties in the lateral patterning of nanostructures by focused-ion-beam lithography.

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页码：2412 / 2414

页数：3

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