FOCUSED ION-BEAM CHANNELING EFFECTS AND ULTIMATE SIZES OF GAALAS/GAAS NANOSTRUCTURES

被引：41

作者：

LARUELLE, F ^{[1
]}

BAGCHI, A ^{[1
]}

TSUCHIYA, M ^{[1
]}

MERZ, J ^{[1
]}

PETROFF, PM ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 16期

关键词：

D O I：

10.1063/1.103153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that focused ion beam implantation of Ga into GaAlAs/GaAs quantum wells occurs much deeper than expected from theory of implantation into amorphous GaAs and that the lateral straggling is one order of magnitude smaller than predicted by the same theories. We show that channeling is the main mechanism involved in these effects. The small probe size achieved with the focused ion beam is thus preserved 200 nm below the surface.

引用

页码：1561 / 1563

页数：3

共 13 条

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