OPTICAL STUDY OF GAAS GAALAS QUANTUM STRUCTURES PROCESSED BY HIGH-ENERGY FOCUSED ION-BEAM IMPLANTATION

被引：22

作者：

LARUELLE, F

HU, YP

SIMES, R

ROBINSON, W

MERZ, J

PETROFF, PM

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[3] MICRO BEAM INC,NEWBURY PK,CA 91320

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90315-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high energy focused ion beam (Ga+, 150 keV) is used to implant and interdiffuse quantum well structures. Optical properties of wires and boxes created by this technique are evaluated by low temperature cathodoluminescence spectroscopy and imaging. We propose two different approaches to optimize the interdiffusion induced energy shift. We show the large energy shifts observed in the narrow wires and boxes (below 4000 Å) are dominated by straggling effects. © 1990.

引用

页码：306 / 309

页数：4

共 8 条

[1] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J].