COMPOSITIONAL DISORDERING OF STRAINED INGAAS GAAS QUANTUM-WELLS BY AU IMPLANTATION - CHANNELING EFFECTS

被引：11

作者：

JACKMAN, TE

CHARBONNEAU, S

ALLARD, LB

WILLIAMS, RL

TEMPLETON, IM

BUCHANAN, M

VOS, M

MITCHELL, IV

JACKMAN, JA

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 3K7,ONTARIO,CANADA

[2] ENERGY MINES & RESOURCES CANADA,MET TECHNOL LAB,OTTAWA K1A 0G1,ONTARIO,CANADA

[3] UNIV OTTAWA,DEPT PHYS,OTTAWA K1N 6N5,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 21期

关键词：

D O I：

10.1063/1.105899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Compositional disordering of strained InGaAs quantum wells by the implantation of Au ions has been examined as a function of the incident implantation angle. Together, photoluminescence and secondary ion-mass spectrometry demonstrate that mixing at depths significantly greater than the mean-implantation range is due to the creation of point defects by ions which have channeled into the crystal. Compositional disordering effects due to the rapid thermal diffusion of Au ions was negligible.

引用

页码：2733 / 2735

页数：3

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