PERFORMANCE OF A FOCUSED-ION-BEAM IMPLANTER WITH TILT-WRITING FUNCTION

被引：1

作者：

SAWARAGI, H ^{[1
]}

MANABE, H ^{[1
]}

KASAHARA, H ^{[1
]}

AIHARA, R ^{[1
]}

NAKAMURA, K ^{[1
]}

NIHEI, F ^{[1
]}

OCHIAI, Y ^{[1
]}

MATSUI, S ^{[1
]}

NOZAKI, T ^{[1
]}

机构：

[1] NEC CORP LTD,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.2095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2095 / 2098

页数：4

共 6 条

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MIYAUCHI, E ;

ARIMOTO, H ;

KURAMOTO, K ;

TAKAMORI, A ;

HASHIMOTO, H .

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[2]

EVASON AF, 1989, J VAC SCI TECHNOL B, V6

[3] CHARACTERISTICS OF SUB-MICRON PATTERNS FABRICATED BY GALLIUM FOCUSED-ION-BEAM SPUTTERING [J].

MORIMOTO, H ;

SASAKI, Y ;

WATAKABE, Y ;

KATO, T .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :159-160

[4] GEOMETRICAL DESIGN OF AN ALIGNMENT MARK FOR MASKLESS ION-IMPLANTATION IN GAAS [J].

MORITA, T ;

MIYAUCHI, E ;

ARIMOTO, H ;

TAKAMORI, A ;

BAMBA, Y ;

HASHIMOTO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :829-832

[5] MASKLESS ION-BEAM ASSISTED ETCHING OF SI USING CHLORINE GAS [J].

OCHIAI, Y ;

SHIHOYAMA, K ;

MASUYAMA, A ;

GAMO, K ;

SHIOKAWA, T ;

TOYODA, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03) :L169-L172

[6]

Sawaragi H., 1987, Microelectronic Engineering, V6, P361, DOI 10.1016/0167-9317(87)90061-X

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