GEOMETRICAL DESIGN OF AN ALIGNMENT MARK FOR MASKLESS ION-IMPLANTATION IN GAAS

被引：7

作者：

MORITA, T

MIYAUCHI, E

ARIMOTO, H

TAKAMORI, A

BAMBA, Y

HASHIMOTO, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：829 / 832

页数：4

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