COMPUTER CONTROL OF MASKLESS ION IMPLANTER WITH AU-SI-BE LM ION-SOURCE FOR III-V COMPOUND SEMICONDUCTORS

被引：11

作者：

MIYAUCHI, E

ARIMOTO, H

BAMBA, Y

TAKAMORI, A

HASHIMOTO, H

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90631-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：183 / 189

页数：7

共 13 条

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[2] FOCUSED SI ION-IMPLANTATION IN GAAS [J].

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MIYAUCHI, E ;

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HASHIMOTO, H .

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[3]

BROWN WL, 1981, SOLID STATE TECH AUG, P60

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TANOUE, H ;

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[5] FET FABRICATION USING MASKLESS ION-IMPLANTATION [J].

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ANDERSON, CL ;

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LAGNADO, I .

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[6]

KUBENA RL, 1983, P IEDM, P566

[7] SELECTIVE SI AND BE IMPLANTATION IN GAAS USING A 100 KV MASS-SEPARATING FOCUSED ION-BEAM SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE [J].

MIYAUCHI, E ;

ARIMOTO, H ;

HASHIMOTO, H ;

UTSUMI, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1113-1116

[8] A 100 KV MASKLESS ION-IMPLANTATION SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE FOR III-V-COMPOUND SEMICONDUCTORS [J].

MIYAUCHI, E ;

ARIMOTO, H ;

HASHIMOTO, H ;

FURUYA, T ;

UTSUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05) :L287-L288

[9]

MIYAUCHI E, 1984, UNPUB NUCL INSTR M B

[10] MASKLESS ETCHING OF GAAS AND INP USING A SCANNING MICROPLASMA [J].

OCHIAI, Y ;

GAMO, K ;

NAMBA, S .

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